Reactive Ion Etching (RIE)

Involves evaluating the characteristics of a surface after being etched using a plasma process.

How It Works
  • Etch rate
    The rate at which material is removed per unit time, measured by the depth of the etched feature divided by the etch time; critical for determining the efficiency of the process.
  • Etch profile
    The shape of the etched feature, particularly the sidewall angle, indicating the degree of anisotropy (vertical etching) achieved.
  • Surface roughness
    Measured by AFM, indicating the level of surface irregularities left after etching, which can affect device performance in certain applications.
  • Damage depth
    The extent of subsurface damage induced by the energetic ions during etching, which can impact device functionality, especially in sensitive materials.
  • Selectivity
    The ratio of etch rate between the desired material and a neighboring material, important when selectively etching specific features on a substrate