Optical Beam Induced Resistance Change (OBIRCH)
A failure analysis technique used in the semiconductor industry to identify defects in Integrated Circuits (ICs) by scanning the device surface with a laser beam, which locally heats the circuits and causes a change in resistance at defective areas, allowing for their precise localization through imaging
How It Works
- A focused laser beam is scanned across the surface of the IC while a constant voltage is applied. When the laser hits a defective area, like a void in a metal line, the local temperature increases significantly, causing a noticeable change in electrical resistance which can be detected as a variation incurrent low.
